Data set supporting "Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced"

A number of of late-forming island coalescence boundaries were identified after growth of the GaN-on-sapphire epilayer had completed, using the shape of silicon-doped marker layers seen in cross-sectional scapping capacitance microscopy / scanning electron microscopy cathodoluminescence. This table records whether dislocations were seen to coincide with these coalescence boundary regions when the previously characterised sites were prepared as lamellae and examined in diffraction contrast transmission electron microscopy.