Supplementary Material: Dopant versus Free Carrier Concentrations in InAs/GaAs Semiconductor Quantum Dots

We describe the parameters used for molecular-beam epitaxy of the silicon-doped InAs/GaAs quantum dot (QD) superlattices, including the substrate temperatures, growth rates, and V/III beam-equivalent pressure (BEP) ratios. We also discuss the selection of parameters for local-electrode atom probe tomography (LEAP) experiments and analysis and consider the impact of LEAP chromatic aberrations on QD sizes and compositions, through consideration of solute-specific 2D contour plots of ion density, composition profiles across QDs, and comparison of LEAP-informed computations with measured physical properties. To provide evidence for substitutional Si incorporation, we present 1D composition profiles across Si clusters. Finally, we provide the input parameters for nextnano and describe the approach used for computing the densities of ionized donors in the GaAs spacer layers.