Data from: Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Metal-organic chemical vapour deposition (MOCVD) is a key technique for
fabricating GaN thin film structures for light-emitting and semiconductor
laser diodes. Film uniformity is an important index to measure equipment
performance and chip processes. This paper introduces a method to improve
the quality of thin films by optimizing the rotation speed of different
substrates of a model consisting of a planetary with seven 6-inch wafers
for the planetary GaN-MOCVD. A numerical solution to the transient state
at low pressure is obtained using computational fluid dynamics. To
evaluate the role of the different zone speeds on the growth uniformity,
single factor analysis is introduced. The results show that the growth
rate and uniformity are strongly related to the rotational speed. Next, a
response surface model was constructed by using the variables and the
corresponding simulation results. The optimized combination of the
matching of different speeds is also proposed as a useful reference for
applications in industry, obtained by a response surface model and genetic
algorithm with a balance between the growth rate and the growth
uniformity. This method can save time, and the optimization can obtain the
most uniform and highest thin film quality.