Dataset: XRD and Crystallographic Data of Electrochemically Etched Gallium Arsenide (GaAs) with Porous Surface for Heterostructure Formation

This dataset contains experimental X-ray diffraction (XRD) data and crystallographic reference parameters for a gallium arsenide (GaAs) sample that underwent electrochemical etching to obtain a porous, textured surface. The modification aimed to enhance surface area and reduce lattice mismatch prior to subsequent heterostructure formation. The etching process was performed in an aqueous–alcoholic solution, producing a surface morphology suitable for oxide and compound semiconductor growth. The dataset includes: Raw XRD intensity data (2θ vs. counts), Reference stick pattern for cubic GaAs (ICSD No. 41674, reference code 01-088-2489), Structural parameters (a = 5.508 Å, space group F-43m, density = 5.75 g cm⁻³). The data support research in semiconductor surface engineering and heterostructure development for optoelectronic and photovoltaic applications.