Investigating the Strain Variation in SiGeSn
收藏DataCite Commons2024-09-18 更新2025-04-15 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-1917479415
下载链接
链接失效反馈官方服务：
资源简介：
Quantum Devices are often manufactured using semiconductor heterestructures. It is important to study the variations of strain in these devices to get a better understanding of the strain effects on functionality.
提供机构：
European Synchrotron Radiation Facility
创建时间：
2024-09-18
