Data for the article entitled: "Effect of Annealing on the Microstructure, Opto-Electronic and Hydrogen Sensing Properties of V2O5 Thin Films Deposited by Magnetron Sputtering"

Files include the data presented in the manuscript entitled: "Effect of Annealing on the Microstructure, Opto-Electronic and Hydrogen Sensing Properties of V2O5 Thin Films Deposited by Magnetron Sputtering", by Mazur et al., https://doi.org/10.3390/coatings12121885Fig. 1a presents X-ray diffraction patterns of V2O5 thin films annealed at various temperatures.Fig. 4a presents results of transmission spectra of V2O5 thin films annealed at various temperatures.Fig. 5 presents the determination of the optical band gap energy of V2O5 thin films annealed at various temperatures: as deposited, 423 K, 473 K, 523 K, 573 K, 623 K and 673 K.Fig. 7a presents results of current-voltage measurements of vanadium oxide thin films annealed at various temperatures.Fig. 7b presents measurements results of conductivity as a function of 1000/T measured for vanadium oxide thin films annealed at various temperatures.Fig. 9 presents thermoelectrical voltage characteristics of as-deposited and annealed vanadium oxide thin films with calculated Seebeck coefficients.Fig. 10a presents electrical resistance changes upon exposure to diluted hydrogen (3.5% in Ar) of V2O5 thin films annealed at various temperatures and measured at operating temperature of 473 K.Fig. 10b presents electrical resistance changes upon exposure to diluted hydrogen (3.5% in Ar) of V2O5 thin films annealed at 673 K and measured at various operating temperatures.