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转接板TSV制造工艺数据集

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国家基础学科公共科学数据中心2026-01-30 收录
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https://nbsdc.cn/general/dataDetail?id=69778f8f195d264c7417244d&type=1
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This dataset targets through-silicon via (TSV) manufacturing evaluation for 3D packaging, covering both mid-term and final project stages under unified measurement conditions. A third-party laboratory performed cross-sectional imaging and dimensional metrology with field-emission SEM at 23±5 °C, 101 kPa, and 30–80% RH. For each active/passive interposer sample, as well as hybrid- and thermo-compression-bonded stacks, five random positions were measured to obtain via diameter and depth, from which aspect ratio (AR) was computed. Environmental logs, instrument settings, and operation records were collected in parallel. The dataset comprises raw SEM images, tabulated measurements (diameter/depth/AR), stage-specific pass/fail criteria, and conclusive third-party reports. Total size is ~2 GB and fully open. It enables TSV capability assessment, cross-stage consistency analysis, and reliability/throughput studies for 3D stacking, informing KOZ rules, bonding flows, and layout constraints.
提供机构:
中国科学院微电子研究所
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