AuNi Schottky contacts on GaN

Gallium nitride thin films have attracted attention due to their prospects in semiconductor devices and technology. In this study, investigation is on the electrical properties and also performing deep-level transient spectroscopy (DLTS) on Au/Ni Schottky diodes fabricated on gallium nitride thin films that were synthesized by electrodeposition on a Si (111) substrate from a solution containing gallium nitrate (Ga(NO3)3) and ammonium nitrate (NH4(NO3)) using current densities of 1 and 3 mA/cm2.