Fluorocarbon Precursors in Anisotropic Atomic Layer Etching of SiO₂
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https://orkg.org/comparison/R1560949
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资源简介：
Summarizes experiments that vary ion energy (bias voltage) during the removal step of anisotropic SiO₂ ALE.
Lists precursor–removal gas pairs, bias-voltage ranges, process temperatures, etching rates, and sources.
Defines the ALE window region where removal is self-limiting, distinguishing it from incomplete-etch and physical-sputtering regimes.
提供机构：
Open Research Knowledge Graph
创建时间：
2025-11-09
