Dataset: Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices
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https://dataverse.nl/citation?persistentId=doi:10.34894/EIOXPT
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资源简介：
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2(HZO) capacitors, interfaced with oxygen conducting metals (La0.67Sr0.33MnO3, LSMO) as electrodes, using atomic resolution electron microscopy while in situelectrical biasing. By direct oxygen imaging, we observe reversible oxygen vacancy migration from the bottom to the top electrode through HZO and reveal associated reversible structural phase transitions in the epitaxial LSMO and HZO layers. We follow the phase transition pathways at the atomic scale and identify that these mechanisms are at play both in tunnel junctions and ferroelectric capacitors switched with sub-millisecond pulses. Our results unmistakably demonstrate that oxygen voltammetry and polarization switching are intertwined in these materials.
提供机构：
Lund University; Paris-Saclay University; University of Groningen; University of Groningen, University College London; University of Groningen, Indian Institute of Science, Bengaluru; University Grenoble Alpes, European Spallation Source, Aarhus University; Delft University of Technology; Indian Institute of Science, Bengaluru
创建时间：
2021-01-01
