Stoichiometric Control via Periods of Open-circuit During Electrodeposition

Electrodeposition can enable stoichiometric control of deposited samples through variation of electroplating potential. We demonstrate an in-situ technique for deposit analysis and stoichiometric control by interspersing periods of open-circuit during deposition. Opening the circuit in an organic Cu-In-S plating bath allows greater incorporation of Cu, In, and/or S into deposited films, based upon the open-circuit voltage the film/electrolyte interface is allowed to achieve. With the same deposition potential, samples can be made to vary from highly Cu-rich to highly In-rich through selection of an appropriate open-circuit voltage limit.