Stoichiometric Control via Periods of Open-circuit During Electrodeposition

Electrodeposition can enable stoichiometric control of deposited samples through variation of electroplating potential. We demonstrate an in-situ technique for deposit analysis and stoichiometric control by interspersing periods of open-circuit during deposition. Opening the circuit in an organic Cu-In-S plating bath allows greater incorporation of Cu, In, and/or S into deposited films, based upon the open-circuit voltage the film/electrolyte interface is allowed to achieve. With the same deposition potential, samples can be made to vary from highly Cu-rich to highly In-rich through selection of an appropriate open-circuit voltage limit.电沉积（Electrodeposition）可通过改变电镀电位，实现沉积样品的化学计量比调控。本文提出并验证了一种可同时实现沉积分析与化学计量比调控的原位技术，该方法通过在沉积过程中穿插开路时段来完成调控。在有机Cu-In-S镀液中切断电路后，通过调控薄膜-电解质界面所能达到的开路电压，可提升铜、铟及硫在沉积薄膜中的掺入量。在相同沉积电位下，通过选取合适的开路电压限值，可使沉积样品的组分从高富铜态连续过渡至高富铟态。