Nanosecond switching of a Phase Change Material for memory applications using time-resolved X-ray diffraction

Thanks to their ability to switch reversibly between an amorphous and a crystalline state, Phase Change Materials (PCM; typically Ge-Sb-Te alloys) are attracting enormous attention for application in various types of memories (embedded, neuromorphic…). Many studies aimed at investigating in situ the phase transition are reported in the literature but almost none at time scales comparable to those used in real devices (ns). In this experiment we plan to investigate the switching of a realistic PCM at ultimate time scales using a laser pump – X-ray probe experimental scheme.