Dataset for Mason's Gain of Down-Scaled InP HBTs with Two Setups: Effects of Probes and Frequency Extenders

Summary:A popular high-frequency performance metric for assessing transistor speeds is transistor’s maximum frequency of oscillation fmax. The determination of the maximum frequency of oscillation fmax becomes particularly critical, because Mason’s gain is typically deduced from on-wafer S-parameter measurements far below fmax. Indeed, fmax is estimated by extrapolating Mason’s gain U from calibrated on-wafer S-parameters to higher frequencies assuming a simple decay of −20 dB per decade. However, the calibrated data arising from on-wafer measurements is notorious for artifacts and inaccuracies resulting from a multitude of origins such as multi-mode propagation, substrate modes, coupling to the neighboring structures, radiation etc. This dataset contains raw on-wafer S-parameters of indium phosphide heterojunction bipolar transistors with emitter widths of 0.9 μm, 0.7 μm, 0.5 μm, and 0.3 μm are measured with two setups in the frequency range 50 MHz to 67 GHz (110 GHz). The measurement setups differ in the utilization of commercially available RF probes and in presence of frequency extenders. The multiline Thru-Reflect-Line calibrated S-parameters of transistors measured with the two setups show disagreements, revealing the presence of on-wafer parasitic effects which translate into larger artifacts in Mason’s gain determination. The dataset supports following conference paper: A. Kanitkar, R. Doerner, T. K. Johansen, W. Heinrich and T. Flisgen, "Mason’s Gain of Down-Scaled InP HBTs with Two Setups: Effects of Probes and Frequency Extenders," 2026 17th German Microwave Conference (GeMiC), Karlsruhe, Germany, 2026, pp. 141-144, doi: 10.1109/GeMiC71240.2026.11516367 (freely downloadable PDF available at https://doi.org/10.5281/zenodo.23039236). DOI: 10.5281/zenodo.23039727 Title:Dataset for Mason's Gain of Down-Scaled InP HBTs with Two Setups: Effects of Probes and Frequency Extenders Creators:Abhijeet Kanitkar (Ferdinand-Braun-Institut (FBH), Germany, ORCID 0009-0000-0997-1688)Ralf Doerner (Ferdinand-Braun-Institut (FBH), Germany, ORCID 0000-0001-5284-6858)Tom Keinicke Johansen (Technical University of Denmark, Denmark, ORCID 0000-0001-8182-1051)Wolfgang Heinrich (Ferdinand-Braun-Institut (FBH), Germany, ORCID 0000-0001-6113-7375)Thomas Flisgen (Brandenburg University of Technology (BTU), Germany, ORCID 0000-0001-8547-5838) License:CC-BY 4.0 International Keywords:InP HBTs, mTRL calibration, On-wafer measurements, transistor characterization Classification:INSPEC B2550 – Bipolar transistorsINSPEC B2555 – Compound semiconductor devicesINSPEC B7140 – Microwave measurementsINSPEC B1265 – Network analysis and scattering parametersINSPEC B7230 – Calibration and metrology techniquesINSPEC B2430 – Microwave/millimeter-wave semiconductor devices Project title:On-wafer microwave metrology for future industrial applications (OnMicro) Funder:European Commission Funder ID:10.13039/100019599Grant number: Partnership 23IND10 OnMicro Link to project homepage:https://www.ptb.de/epm2023/onmicro/home Software: The files can be viewed or imported with the METAS VNA Tools software, see https://www.metas.admin.ch/en/vna-tools. The files can be also viewed by any text editor (VIM, Notepad, emacs).