Bulk Velocity Field Characteristics of GaAs, InP, InAs and GaSb for Several Doping Concentrations at 300K
收藏DataCite Commons2020-11-30 更新2025-04-16 收录
下载链接：
https://ieee-dataport.org/open-access/bulk-velocity-field-characteristics-gaas-inp-inas-and-gasb-several-doping-concentrations
下载链接
链接失效反馈官方服务：
资源简介：
These datasets contain bulk BTE simulation results for GaAs, InP, GaSb and InAs as a function of electric field at 300 K.
提供机构：
IEEE DataPort
创建时间：
2020-11-30
