I-V Charactersitcs of Semiconductor NWs
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This study investigates the current-voltage (I-V) characteristics of semiconductor nanowires (NWs) through a detailed experimental analysis and model fitting. The I-V data, collected from two different NW samples, were imported into Mathematica for curve fitting, revealing key electronic properties. The data were fitted to an exponential model, providing insights into the transport behavior of these nanostructures. The findings demonstrate the potential of semiconductor NWs for applications in electronic devices, with implications for their performance in real-world applications. The study presents a refined approach compared to previously published work, highlighting the detailed theory and methodology
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IEEE DataPort创建时间:
2025-03-02



