Data underlying the publication: Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3

Dataset to accompany the publication of a manuscript on isotropic plasma ALE of GaN using SF6 plasma and TMA. The initial study focused on DFT simulations using Schrödinger Suites software. Quantum ESPRESSO and Jaguar packages were used to calculate the gibbs free energy change for the ALE reactions to screen the proposed chemistry based on Natarajan-Elliott analysis. Experimental studies were then performed to confirm the predictions from the simulations, with good agreement between the two. Saturation curves, synergy and temperature window were used to characterise the process, with surface roughness and chemical composition used to demonstrate the low damage nature of this etching process.