Neuromorphic Electro-Stimulation Based on Atomically Thin Semiconductor for Damage-Free Inflammation Inhibition
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https://www.ncbi.nlm.nih.gov/sra/SRP483833
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Inflammation, caused by accumulation of inflammatory cytokines from immunocytes, is prevalent in a variety of diseases. Electro-stimulation emerges as a promising candidate for inflammatory inhibition. Although electroacupuncture is free from surgical injury, it faces the challenges of imprecise pathways/current spikes, and insufficiently defined mechanisms, while non-optimal pathway or spike would require high current amplitude, which makes electro-stimulation usually accompanied by damage and complications. Here, we propose a neuromorphic electro-stimulation based on atomically thin semiconductor floating-gate memory interdigital circuit. Direct stimulation is achieved by wrapping sympathetic chain with flexible electrodes and floating-gate memory are programmable to fire bionic spikes, thus minimizing nerve damage. A substantial decrease (73.5%) in inflammatory cytokine IL-6 occurred, which also enabled better efficacy than commercial stimulator at record-low currents with damage-free to sympathetic neurons. Additionally, using transgenic mice, the anti-inflammation effect is determined by Ã2 adrenergic signaling from myeloid cell lineage (monocytes/macrophages and granulocytes). Overall design: There were 2D ES (tendon surgery, flexible electrode implantation and 2D ES), non-ES (tendon injury and flexible electrode implantation without ES) groups
创建时间:
2024-02-27



