RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on an Si surface

This paper presents a computer program, which facilitates the calculation of changes the intensity of RHEED oscillations from the heteroepitaxial structures of (0001)GaN films nucleated on a Si surface. The calculations are based on the use of a dynamical diffraction theory and different models of scattering crystal potential. The previous version of this program (AETW_v1_0) may be found at http://dx.doi.org/10.1016/j.cpc.2014.07.003.本文提出一款计算机程序，可用于计算硅（Si）衬底上成核的(0001)晶面氮化镓（GaN）薄膜异质外延结构的反射高能电子衍射（Reflection High-Energy Electron Diffraction, RHEED）振荡强度变化。该程序的计算基于动力学衍射理论与多种晶体散射势模型。本程序的旧版本（AETW_v1_0）可通过http://dx.doi.org/10.1016/j.cpc.2014.07.003获取。