Data set : Resistance (Ω) of HgTe quantum well as a Function of Temperature and Gate Voltage

Title:Resistance (Ω) of HgTe quantum well as a Function of Temperature and Gate Voltage Description:This dataset contains measured resistance values (in kiloohms, kΩ) for a device under varying temperatures and gate voltages. The data is structured in a CSV file where: The first row lists temperature values (in Kelvin, K ). The first column lists gate voltage values (in Volts, V). The remaining cells represent the corresponding resistance (kΩ) at each temperature (row header) and gate voltage (column header). Key Details: File format: CSV (comma-separated values). Variables: Gate voltage (V), temperature (K), resistance (kΩ). Use Case: for paper “ Interplay Between Electron-Hole and Impurity Scattering in HgTe-Based Quantum Wells “ Additional Notes (if applicable): Measurement conditions (low temperature). Device/material details (HgTe 21 nm width quantum wells).