Completely Annealing-Free Flexible Perovskite Quantum Dot Solar Cells Employing UV-Sintered Ga-Doped SnO2 Electron Transport Layers.xlsx

Fig. 1: Crystallographic and chemical properties of each SnO2 filma−c GIWAXS patterns for SnO2 NP, SnO2 CNR, and Ga:SnO2 CNR films, respectively. d XPS core level spectra of Ga 2p and Sn 3d for each SnO2 film. e Deconvoluted XPS O 1s spectra of each SnO2 film. f HR-TEM image and schematic representation of Ga:SnO2 CNR morphology and chemical structure. Fig. 2: Charge transport property from CsPbI3-PQD to customized SnO2.a J−V characteristics and calculated conductivity for each SnO2-based device. b Energy band diagrams for the configurations of the CsPbI3-PQD solar cell. c Mott–Schottky plots of CsPbI3-PQD solar cell with each SnO2 ETL. d Steady-state PL spectra of the CsPbI3-PQD films deposited on each SnO2 film. e TRPL spectra with excitation wavelength of 463 nm for CsPbI3-PQD films deposited on each SnO2 film. f Dark J−V curves of the electron-only devices (ITO/SnO2/CsPbI3-PQD/PCBM/Au) with VTFL kink points. Fig. 3: CsPbI3-PQD solar cell performance using each SnO2 as ETL.a Schematic illustration representing the UV sintering process for formation of SnO2 CNR thin film and fabrication method for CsPbI3-PQD solar cells. b J−V characteristics of best-performing CsPbI3-PQD solar cells using various SnO2 as ETL (inset: device configuration measured by SEM). c IPCE spectra of CsPbI3-PQD solar cells with SnO2 ETLs and integrated JSC calculated from IPCE. d Normalized PCE obtained by stability tests of each SnO2-based device under ambient condition (25℃, 20% RH) for 10 days (inset: XRD data of the CsPbI3-PQD film exfoliated from each SnO2 after 1 day and 7 days, respectively).Fig. 4: Characterizations of each SnO2 ETL-based flexible CsPbI3-PQD solar cellsa J−V characteristics of best-performing flexible CsPbI3-PQD solar cells using various SnO2 as ETL (inset: photograph of the fabricated flexible solar cell). b In-situ relative resistance change (ΔR/R0) of each SnO2-based device (ITO/SnO2/Au) during bending test with 7.5 mm of curvature of radius (RC) (inset: after recovery from bending at various values of RC). c Normalized PCE of the flexible CsPbI3-PQD solar cell after repeated bending at RC = 7.5 mm for 500 bending cycles (inset: top-view SEM image of SnO2 film on a flexible substrate before and after bending test).Table 1. Photovoltaic parameters of best-performing CsPbI3-PQD solar cells with various SnO2 ETLs (SnO2 NP, SnO2 CNR, and Ga:SnO2 CNR) under 1 sun conditions.Table 2. Photovoltaic parameters of best-performing flexible CsPbI3-PQD solar cells with various SnO2 ETLs (SnO2 NP, SnO2 CNR, and Ga:SnO2 CNR) under 1 sun conditions.