SiC MOSFET器件的高温栅偏加速老化实验

"为了研究SiC MOSFET器件的栅氧可靠性，本部分首先通过 Sentaurus 仿真软件，建立了SiC MOSFET模型，研究栅氧层陷阱对器件造成的退化机理。然后采用正向高温栅偏实验对三种商用1200V SiC功率 MOSFET器件进行考核，通过监测实验过程中阈值电压的漂移量ΔVth，来衡量器件栅氧的高温偏置稳定性。最后还关注 SiC MOSFET 在负向高温偏置栅应力下的退化，依据实测参数，建立了阈值退化量ΔVth与栅压幅值、环境温度以及应力时间等因素相关的退化表征模型。
因此SiC MOSFET器件的高温栅偏加速老化实验数据集包含3个主要数据项：通过 Sentaurus 仿真软件得到的SiC MOSFET器件栅氧层缺陷仿真数据；三种商用SiC MOSFET器件正向高温栅偏实验数据；先导SiC MOSFET器件负向短时高温栅偏实验数据。数据量47.5M。"

To investigate the gate oxide reliability of SiC MOSFET devices, this section first establishes a SiC MOSFET model using Sentaurus simulation software to study the degradation mechanism induced by traps in the gate oxide layer of the devices. Then, three commercial 1200V SiC power MOSFET devices are evaluated through positive high-temperature gate bias (HTGB) tests, where the threshold voltage shift ΔVth is monitored during the experiments to assess the high-temperature bias stability of the device gate oxide. Finally, the degradation of SiC MOSFET under negative high-temperature gate bias stress is also examined, and a degradation characterization model correlating the threshold degradation ΔVth with factors such as gate voltage amplitude, ambient temperature, and stress time is established based on measured parameters.
The high-temperature gate bias accelerated aging test dataset for SiC MOSFET devices includes three main data items: simulation data of gate oxide layer defects in SiC MOSFET devices obtained via Sentaurus simulation software; positive high-temperature gate bias test data of three commercial SiC MOSFET devices; and negative short-time high-temperature gate bias test data of preliminary SiC MOSFET devices. The total data size is 47.5 MB.

搜集汇总

背景与挑战

背景概述

该数据集主要包含SiC MOSFET器件在高温栅偏条件下的加速老化实验数据，涉及栅氧层缺陷仿真、正向高温栅偏实验和负向短时高温栅偏实验三个主要数据项，总数据量为47.5M。这些数据用于研究SiC MOSFET器件的栅氧可靠性，并建立了阈值退化量与栅压幅值、环境温度及应力时间等因素相关的退化表征模型。