"Static Characterization of SiC Discrete Devices and Modules using Low-Cost Alternative to Curve Tracer"
收藏DataCite Commons2026-03-12 更新2026-05-03 收录
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https://ieee-dataport.org/documents/static-characterization-sic-discrete-devices-and-modules-using-low-cost-alternative-curve
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"Static characterization measurements are presented for three multi-chip SiC power modules and five individual samples each of three discrete SiC MOSFET part numbers sourced from different manufacturers, all tested across a representative range of junction temperatures. The full set of characterized parameters includes the forward output characteristic, reverse channel conduction characteristic, body diode voltage under negative gate bias, gate threshold voltage, and transfer curves. All measurements were carried out using a custom low-cost test rig developed in-house, specifically designed to enable automatic, repeatable, and highly flexible device characterization, eliminating the need for dedicated commercial curve tracers. Tested devices where of the latest generation when tests where performed."
提供机构：
IEEE DataPort
创建时间：
2026-03-12
