Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices

This study investigates the worst-case Single-Event Effect (SEE) response in semiconductorpower devices induced by energetic ions. An existing predictive model is refined and extended to potentiallyconsider various semiconductor materials, other geometries and technologies. Comprehensive expressionsfor predicting critical ion energies that lead to worst-case SEE response in semiconductor power devices areobtained through computational simulations. A dedicated experiment is conducted to investigate the modelvalidity and accuracy in describing additional destructive failure mechanisms in silicon transistors, beyonda traditional technology.