X-ray Diffraction Data for AlₓGa₁−ₓAs Nanostructures Synthesized by Wet Electrochemical Deposition under Different Voltage Regimes

The dataset includes XRD patterns of three AlₓGa₁−ₓAs samples synthesized on textured GaAs substrates under different electrochemical deposition regimes: voltage switching, gradual voltage increase, and pulsed voltage. The XRD data were used to analyze phase composition, crystallinity, peak position shifts, full width at half maximum (FWHM), and crystallite size evolution as a function of aluminum incorporation. Only processed diffraction data and derived tabulated results are provided. Raw detector output and instrumental configuration files are not included. An OriginLab project file (*.opju) containing the processed diffraction profiles and comparative visualization used for figure preparation is provided to ensure transparency of data handling and plotting. A detailed description of the dataset structure and reuse notes is provided in the accompanying README.md file. Methods X-ray diffraction measurements were performed to investigate the crystalline structure and phase composition of AlₓGa₁−ₓAs layers synthesized on textured GaAs substrates. Diffraction patterns were recorded in the 2θ range covering the principal reflections of GaAs- and AlAs-related crystallographic planes. The dataset includes processed diffraction profiles for three samples prepared under distinct electrochemical deposition regimes. Data processing involved background subtraction, peak identification, and peak fitting to extract diffraction angles, intensities, and full width at half maximum (FWHM) values. Peak positions were used to analyze systematic shifts associated with aluminum incorporation into the GaAs lattice, while FWHM values were used to estimate crystallite size and relative crystalline quality. Visualization and comparative analysis of the diffraction patterns were performed using OriginLab software. Instrumental parameters and raw diffraction files are intentionally omitted and may be disclosed in future studies. Content of the dataset The dataset includes: Processed XRD diffraction profiles for three AlₓGa₁−ₓAs samples (Sample 1–3); Tabulated peak positions for multiple crystallographic planes; Tabulated FWHM, peak intensity, and estimated crystallite size for the (111) reflection; An OriginLab project file (*.opju) containing the processed diffraction curves and plotting layout; A sample identification table linking diffraction data to electrochemical deposition regimes. All tabulated data are provided in open formats (CSV).