Nanostars in Highly Si-Doped GaN
收藏DataCite Commons2024-03-26 更新2025-04-16 收录
下载链接：
https://repod.icm.edu.pl/citation?persistentId=doi:10.18150/BJT736
下载链接
链接失效反馈官方服务：
资源简介：
SEM images of the surface topograpy of highly Si-doped GaN layers grown by plasma-assisted molecular beam epitaxy after electrochemical etching at a bias indicated in file name. Selected SEM images are presented in the publication.R1112-2.5V GaN:Si n=1e20cm-3P3402-4V GaN:Si n=5.6e19cm-3P1106-7V GaN:Si n=1e19cm-3
提供机构：
RepOD
创建时间：
2024-03-21
