Nanostars in Highly Si-Doped GaN
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SEM images of the surface topograpy of highly Si-doped GaN layers grown by plasma-assisted molecular beam epitaxy after electrochemical etching at a bias indicated in file name. Selected SEM images are presented in the publication.R1112-2.5V GaN:Si n=1e20cm-3P3402-4V GaN:Si n=5.6e19cm-3P1106-7V GaN:Si n=1e19cm-3
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2024-03-21
