Voltage regulation of atomic-scale energy dissipation at niobium diselenide electro-friction interface

In this study, we investigated the friction mechanisms behind the observed changes in friction of niobium diselenide (NbSe2) thin films under varying normal bias voltages. The results show that both the friction force and coefficient of friction (COF) increase with the application of positive and negative bias voltages. These friction changes are significantly affected by the electrostatic force on the sample surface and the electronic excitation
during friction leads to energy dissipation, ultimately increasing friction. These findings not only increase our understanding of the interfacial friction phenomenon of nano-electric friction, but also help to control energy
dissipation of sliding nanofriction, making electronic control of friction possible.