Data publication: CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications
收藏数据链接：
官方服务：
资源简介：
The data included in the publication are results of SET device simulations, Monte-Carlo simulations of physical processes (ion-beam mixing, phase seepration, Si nanodot formation) and micrographs taken by electron and ion microscopes.
提供机构：
Rodare创建时间：
2023-04-20
