SXDM on GeSn nanowires and GaN reference structure
收藏DataCite Commons2026-02-16 更新2026-05-03 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-2331196582
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资源简介：
We will employ Scanning X-ray Diffraction Microscopy with the mininmal resolution of ~25 nm to map the strain and stoichiometry in GeSn nanowires. The orientation has been pre-determined at BM32, allowing to align them at ID01. Moreover, we will perform mapping of the complete strain tensor in a GaN/Si heterostructure, to be correlated to a series of strain mapping techniques including DFXM, EBSD and HR-STEM
提供机构：
European Synchrotron Radiation Facility
创建时间：
2026-02-16
