Reaction-network kinetics model and datasets for maximizing T-center formation in silicon

Corrected reaction-network kinetics model and complete supporting datasets for the manuscript "Kinetics-based maximization of T center formation in silicon" (NCOMMS-26-032537). The deposit contains a MATLAB stiff-ODE model of an 11-species carbon/hydrogen/vacancy/interstitial defect reaction network (H_i, C_i, CH_i, V, I, C, CH, CH2, CC, CCH, HCCH; 29 reactions), together with every dataset underlying the main-text and supplementary figures: temperature x carbon-to-hydrogen feed-ratio heatmap sweeps for four initial-condition sets (C1-C4), interstitial/vacancy source-term sensitivity sweeps (vonly, ionly, halfIV, doubleIV), and the H_i-only control optimization results (500-seed aggregate plus the champion solution). All datasets were regenerated with two unit corrections applied 2026-06-10: (i) the carbon interstitial diffusivity prefactor D_C0 corrected from 4.4e-5 to 0.44 cm^2/s following Tipping & Newman, Semicond. Sci. Technol. 2, 315 (1987); and (ii) the diffusion-limited rate for the I+V annihilation channel (reaction 29) multiplied by Avogadro number for consistency with the molar (mol/m^3) state convention. Concentrations in mol/m^3, energies in eV, diffusivities in cm^2/s. Runs under MATLAB R2024b and reproduces all figures. Code is offered under the MIT License; data under CC-BY-4.0 (record license CC-BY-4.0; see NOTICE.md).