XRD and Crystallographic Data of Electrochemically Etched Gallium Phosphide (GaP) for Porous Surface Formation

This dataset presents X-ray diffraction (XRD) data and crystallographic reference parameters for a gallium phosphide (GaP) sample that underwent electrochemical etching to form a porous, textured surface. The modification aimed to enhance the surface area and optimize lattice compatibility for the subsequent formation of heterostructures. The etching was carried out in an aqueous–alcoholic solution to achieve controlled porosity and maintain crystalline integrity. The dataset includes: Experimental XRD intensity data (2θ vs. counts); Reference stick pattern for cubic GaP (PDF reference code 00-032-0397; space group F-43m, a = 5.4506 Å, density = 4.13 g cm⁻³, Z = 4); Peak positions and intensities corresponding to key reflections (111), (200), (220), (311), (222), (400), (331), and others. This dataset supports studies on surface modification, porous semiconductors, and GaP-based heterostructure synthesis for optoelectronic and photovoltaic devices. Funding:Prepared within the project “Design and research of oxide heterostructures for portable solar cells” (Project No. 0124U000223), funded by the National Research Foundation of Ukraine under the Cambridge–NRFU 2022 Individual Grants programme (supported by the University of Cambridge, UK).