Raman Spectroscopy Data for 3C-SiC/Si Heterostructures with and without Porous Silicon Buffer Layer

This dataset contains Raman spectroscopy data acquired for cubic silicon carbide (3C-SiC) thin films grown on silicon substrates, with and without a porous silicon (por-Si) buffer layer.The data were collected to assess residual mechanical stress and crystalline quality in heteroepitaxial 3C-SiC/Si structures. Two series of samples are included: S-ref: 3C-SiC films grown directly on monocrystalline silicon substrates; S-buf: 3C-SiC films grown on silicon substrates with an intermediate porous silicon buffer layer. The dataset includes raw and processed Raman spectra used for comparative analysis of phonon peak positions and linewidths. The primary focus is on the transverse optical (TO) phonon mode of 3C-SiC, which is sensitive to residual biaxial stress. The data are intended to support reproducibility of spectroscopic analysis and may be reused for comparative studies of stress relaxation mechanisms in semiconductor heterostructures. Methods Raman spectra were acquired at room temperature using a confocal micro-Raman spectrometer equipped with a visible excitation source. Measurements were performed under identical conditions for all samples to ensure comparability between buffered and buffer-free structures. Spectral calibration was carried out using a monocrystalline silicon reference. The Raman spectra were collected in the spectral range characteristic of cubic SiC phonon modes. Multiple accumulations were used to improve the signal-to-noise ratio. Data processing included baseline correction, normalization, and peak fitting of the relevant phonon modes. The position and full width at half maximum (FWHM) of the transverse optical (TO) mode were extracted and used as indicators of residual mechanical stress and crystalline quality. Further methodological details may be added in future dataset versions upon completion of the full experimental study. Content of the dataset The dataset includes: Raw Raman spectra (as acquired from the spectrometer); Processed spectra after baseline correction and normalization; Tabulated peak parameters (peak position, FWHM) in open formats; Sample identification table linking spectra to sample series (S-ref, S-buf).