Effects Of Cd1-Xznxs Alloy Composition And Post-Deposition Air Anneal On Ultra-Thin Cdte Solar Cells Produced By Mocvd
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Ultra-thin CdTe:As/Cd<sub>1-x</sub>Zn<sub>x</sub>S photovoltaic solar cells with an absorber thickness of 0.5 µm were deposited by metal-organic chemical vapour deposition on indium tin oxide coated boro-aluminosilicate substrates. The Zn precursor concentration was varied to compensate for Zn leaching effects after CdCl<sub>2</sub> activation treatment. Analysis of the solar cell composition and structure by X-ray photoelectron spectroscopy depth profiling and X-ray diffraction showed that higher concentrations of Zn in the Cd<sub>1‑x</sub>Zn<sub>x</sub>S window layer resulted in suppression of S diffusion across the CdTe/Cd<sub>1‑x</sub>Zn<sub>x</sub>S interface after CdCl<sub>2 </sub>activation treatment. Excessive Zn content in the Cd<sub>1-x</sub>Zn<sub>x</sub>S alloy preserved the spectral response in the blue region of the solar spectrum, but increased series resistance for the solar cells. A modest increase in the Zn content of the Cd<sub>1-x</sub>Zn<sub>x</sub>S alloy together with a post-deposition air anneal resulted in an improved blue response and an enhanced open circuit voltage and fill factor. This device yielded a mean efficiency of 8.3% over 8 cells (0.25 cm<sup>2</sup> cell area) and best cell efficiency of 8.8%.
