Data underlying the publication: Device-Aware Test for Ion Depletion Defects in RRAMs
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资源简介:
The raw data of a defect-free RRAM I-V curve, which can be seen in Fig. 10 (a). The data set can help researcher to make an I-V curve or R-V curve of a HfO2 based RRAM device.
本数据集包含无缺陷阻变随机存取存储器(RRAM)的原始电流-电压(I-V)曲线数据,如图10(a)所示。该数据集可辅助研究人员绘制基于氧化铪(HfO₂)的RRAM器件的I-V曲线或电阻-电压(R-V)曲线。
创建时间:
2025-03-17




