Integrated electron emitters

Data are associated with the publication: Michał Krysztof, Paweł Miera, Paweł Urbański, Tomasz P. Grzebyk, Matthias Hausladen, Rupert Schreiner, Integrated silicon electron source for high vacuum microelectromechanical system devices. Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics. 2024, vol. 42, nr 2, 023001, pp. 1-9.They contain current-voltage and time characteristics of electron emission from silicon field emitters in two different configurations: 2-electrode with cathode and anode and 3-electrode with addtional integrated silicon gate.Please consult the Readme.txt file for additional information.