Ultrafast high-endurance memory based on sliding ferroelectrics

The persistence of voltage-switchable collective electronic phenomena down
to the atomic scale has extensive implications for area-efficient and
energy-efficient electronics, especially in emerging nonvolatile memory
technology. In this study, we investigate the performance of a
ferroelectric field-effect transistor (FeFET) based on sliding
ferroelectricity in bilayer boron nitride at room temperature. Sliding
ferroelectricity represents a novel form of atomically thin
two-dimensional ferroelectrics, characterized by the switching of
out-of-plane polarization through interlayer sliding motion. We examined
the FeFET device employing monolayer graphene as the channel layer, which
demonstrated ultrafast switching speeds on the nanosecond scale and high
endurance exceeding 1011 switching cycles, comparable to state-of-the-art
FeFET devices. These superior characteristics highlight the potential of
two-dimensional sliding ferroelectrics for inspiring next-generation
nonvolatile memory technology.