Measuring moiré superstructures in twisted two-dimensional semiconductors with scanning tunneling microscopy

When two atomically thin layers of the same material are stacked with a slight twist, a new system, called moiré superstructure, emerges. By tunning the twist angle, we can control how electrons distribute, giving rise to unique phenomena such as superconductivity and other exotic quantum phases. Using an electron tunneling-based microscope—an instrument capable of imaging and probing materials at the atomic scale—I investigated how unavoidable electrical imperfections, known as electrostatic disorder, influence the electronic properties of twisted semiconducting materials. The results obtained are essential for bridging fundamental quantum collective properties with the development of next-generation quantum technologies.