Xe and Kr release rates

We present the raw data obtained from release rate of Xe and Kr implanted in UO2. We performed different sample preparation (different annealing temperatures or polishing treatment) on polycristalline and monocrystalline UO2. Ion implantation were performed at various fluences in UO2 samples (between 9.5.1010 to 5.1014 i/cm2). Release rate of Xe and Kr are obtained at 1300°C under vacuum from desorption experiments performed on the PIAGARA plateform at the CENBG (Centre d’Etudes Nucléaires de Bordeaux-Gradignan). Since we made a variety of samples depending on multiple parameters (sample type, sample preparation, ion implantation type and fluence), these data represent a serious amount of work that could be saved for the scientific community that might use them for other purposes such as burst modelling