Xe and Kr release rates

We present the raw data obtained from release rate of Xe and Kr implanted in UO2. We performed different sample preparation (different annealing temperatures or polishing treatment) on polycristalline and monocrystalline UO2. Ion implantation were performed at various fluences in UO2 samples (between 9.5.1010 to 5.1014 i/cm2). Release rate of Xe and Kr are obtained at 1300°C under vacuum from desorption experiments performed on the PIAGARA plateform at the CENBG (Centre d’Etudes Nucléaires de Bordeaux-Gradignan). Since we made a variety of samples depending on multiple parameters (sample type, sample preparation, ion implantation type and fluence), these data represent a serious amount of work that could be saved for the scientific community that might use them for other purposes such as burst modelling本研究公开了注入至二氧化铀（UO₂）中的氙（Xe）与氪（Kr）的释放速率相关原始实验数据。我们针对多晶与单晶二氧化铀样品，开展了差异化的样品预处理工艺，包括调控退火温度与采用不同抛光处理方式。实验中对二氧化铀样品施加了不同注量的离子注入处理，注量范围为9.5×10¹⁰ 至 5×10¹⁴ 离子/平方厘米（i/cm²）。本研究依托波尔多-格拉迪南核研究中心（Centre d’Etudes Nucléaires de Bordeaux-Gradignan，简称CENBG）的PIAGARA实验平台，在1300℃真空环境下开展解吸实验，测得氙与氪的释放速率。由于本研究基于样品类型、样品预处理方式、离子注入类型与注量等多个参数制备了多样化的实验样品，上述数据凝聚了大量的实验工作成果，可供科研社区复用，用于辐照爆裂模型构建等各类研究场景，从而避免科研人员重复开展同类实验。