全成分范围GaAs1-xSbx纳米线电学和近红外光探测性能的化学计量学效应

将所制成的Sb含量为100%、94%、74%和50%的纳米线分别制成纳米线FET，用以研究室温下其在近红外光电探测方面的性能。GaAs1-xSbx (x = 1) 纳米线（沟道长度3 μm，纳米线直径30 nm）在不同强度的1310 nm入射激光下光响应的变化。计算得到GaSb，GaAs0.06Sb0.94，GaAs0.26Sb0.74和GaAs0.5Sb0.5纳米线光电探测器在1310 nm入射光条件下的最高响应率分别为616.4、369.6、6.7和1.2 A·W-1，探测率分别为5.6 × 108、4.1 × 108、6.2 × 107和3.9 × 107 Jones。随着Sb含量的升高，光电流、响应率和探测率均相应增大，这可能是由于带隙的减小以及更高的空穴迁移率所导致的。Nanowire field-effect transistors (FETs) were fabricated using the as-prepared nanowires with Sb contents of 100%, 94%, 74% and 50% respectively, to investigate their near-infrared photodetection performance at room temperature. The photoresponse variations of GaAs₁₋ₓSbₓ (x = 1) nanowires (with a channel length of 3 μm and nanowire diameter of 30 nm) under 1310 nm incident laser with different intensities were studied. The peak responsivities of GaSb, GaAs₀.₀₆Sb₀.₉₄, GaAs₀.₂₆Sb₀.₇₄ and GaAs₀.₅Sb₀.₅ nanowire photodetectors under 1310 nm incident light were calculated to be 616.4, 369.6, 6.7 and 1.2 A·W⁻¹, respectively, with their detectivities being 5.6 × 10⁸, 4.1 × 10⁸, 6.2 × 10⁷ and 3.9 × 10⁷ Jones, respectively. As the Sb content increases, the photocurrent, responsivity and detectivity all increase correspondingly, which is likely attributed to the narrowed band gap and higher hole mobility.

搜集汇总

背景与挑战

背景概述

该数据集提供了全成分范围GaAs1-xSbx纳米线在近红外光探测方面的实验数据，包括不同锑（Sb）含量样品的响应率与探测率等关键性能参数。数据揭示了纳米线光电性能随化学计量比变化的规律，并关联了带隙和载流子迁移率等物理机制。