Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode

Name: Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode
Creator: Institute of High Pressure Physics
Published: 2024-11-14T17:29:11+08:00

RepOD Repository for Open Data2024-11-14 更新2026-07-23 收录

激光二极管

金属化界面处理

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/L31LP7 数据链接链接失效反馈

官方服务：

资源简介：

Levchenko, Iryna; Kryvyi, Serhii; Kamińska, Eliana; Smalc-Koziorowska, Julita; Grzanka, Szymon; Kacperski, Jacek; Nowak, Grzegorz; Kret, Sławomir; Marona, Łucja; Perlin, Piotr, 2024, "Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode", https://doi.org/10.18150/L31LP7, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2024-11-14