Hybrid DFT calculations: Si defects Ga2O3
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https://repod.icm.edu.pl/citation?persistentId=doi:10.18150/1MQF0J
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资源简介：
Point defects in silicon doped β-Ga2O3: hybrid-DFT calculation are investigated. The data of final relaxed structure of the defects with the best formation energies are shown here in txt format as CONTCAR file, which can be open using VESTA visualizing open source software and also any text editor.
提供机构：
RepOD
创建时间：
2023-10-16
