Research data supporting "Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates"

This dataset contains Energy-dispersive X-ray spectroscopy (EDX) data of multiple quantum wells (MQWs) overgrown on as-grown and porosified InGaN-based superlattice pseudo-substrates. Five pairs of nominally 7 nm-thick In0.06Ga0.94N quantum barriers (QBs) and 3 nm-thick In0.1Ga0.9N QWs were overgrown on two different templates that were etched under medium voltages (sample B2) and high voltages (sample B3) to achieve porosification. The edge of each sample wafer has intentionally remained un-etched as a non-porous comparator. Lamella of each sample have been prepared using standard lift-off procedures. Elemental mapping of the InGaN MQWs was carried out using EDX in a Thermo Fisher ScientificTM Spectra 300 scanning transmission electron microscope. From each lamella three different EDX profiles with a step size of 0.65 nm and integrated over a width of about 38 nm were collected. The regions for the EDX analysis were chosen so that they are at least 1 µm apart from each other and do not overlap with the sidewalls of V-pits and other structural inhomogeneities at which the local composition might vary due to differences in the incorporation efficiency. The data in this dataset are visualized in Figure 6 of the associated publication.