Research data supporting "InAs nanowire transistor pairs as NMOS inverters"

This dataset contains the original research data presented in the journal article. The data consist of electrical measurements performed on nanowire-based field-effect transistors and inverter devices. The electrical measurements were performed at room temperature using a Cascade Summit series semi-automated probe station connected to an Agilent Technologies B1500A semiconductor device analyser. A digital oscilloscope was used to study dynamic behaviour in Figures 4b and c.