An extension of the computer program for dynamical calculations of RHEED intensity oscillations. Heterostructures

Abstract A practical computing algorithm working in real time has been developed for calculations of the reflection high-energy electron diffraction from the molecular beam epitaxy growing surface. The calculations are based on a dynamical diffraction theory in which the electrons are scattered on a potential, which is periodic in the direction perpendicular to the surface. Title of program: RHEED_v2 Catalogue Id: ADUY_v1_1 Nature of problem Reflection high-energy electron diffraction (RHEED) is a very useful technique for studying the growth and the surface analysis of thin epitaxial structures prepared by the molecular beam epitaxy (MBE). The RHEED technique can reveal, almost instantaneously, changes either in the coverage of the sample surface by adsorbates or in the surface structure of a thin film. Versions of this program held in the CPC repository in Mendeley Data ADUY_v1_0; RHEED; 10.1016/j.cpc.2004.12.001 ADUY_v1_1; RHEED_v2; 10.1016/j.cpc.2006.08.003 ADUY_v2_0; RHEEDGr; 10.1016/j.cpc.2005.09.004 ADUY_v3_0; RHEEDGR-09; 10.1016/j.cpc.2009.07.003 ADUY_v4_0; RHEED1DProcess; 10.1016/j.cpc.2009.11.009 This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2018)

【摘要】本研究开发了一种可实时运行的实用计算算法，用于计算分子束外延（molecular beam epitaxy, MBE）生长表面的反射式高能电子衍射（Reflection high-energy electron diffraction, RHEED）信号。该计算基于动力学衍射理论，其中电子在垂直于表面方向呈周期性分布的势场中发生散射。
程序名称：RHEED_v2
目录编号：ADUY_v1_1
问题性质：反射式高能电子衍射（RHEED）是研究分子束外延（MBE）制备的薄层外延结构生长过程与表面分析的极为实用的技术。该技术可近乎瞬时地反映样品表面吸附物覆盖度的变化，或是薄膜表面结构的改变。
该程序在Mendeley数据平台的CPC库中的存档版本如下：
ADUY_v1_0; RHEED; 10.1016/j.cpc.2004.12.001
ADUY_v1_1; RHEED_v2; 10.1016/j.cpc.2006.08.003
ADUY_v2_0; RHEEDGr; 10.1016/j.cpc.2005.09.004
ADUY_v3_0; RHEEDGR-09; 10.1016/j.cpc.2009.07.003
ADUY_v4_0; RHEED1DProcess; 10.1016/j.cpc.2009.11.009
本程序源自贝尔法斯特女王大学维护的CPC程序库（1969-2018）。