Phonon-limited mobility for electrons and holes in highly-strained silicon
收藏B2FIND2026-04-11 收录
下载链接:
https://b2find.eudat.eu/dataset/dfd57ac2-061c-57d6-9fe4-8f0d755f3259
下载链接
链接失效反馈官方服务:
资源简介:
Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform...
应变工程(strain engineering)是提升半导体(semiconductors)中载流子(charge carriers)迁移率的常用技术,但其相关效应尚未得到充分阐明。本研究中,我们将开展……



