Intrinsic Temporal Behavior of Titanium Oxide Memristors for Neuromorphic Systems: Raw dataset

<strong>Methodology</strong> Experiments were conducted on in-house fabricated Pt/TiO₂/Au structure with thickness of 15/25/20<em>nm</em> respectively. The fabricated structures were characterized using a 16 x 16 probe card mounted on a Cascade Microtech Summit 12000 Prober controlled via a ARC ONE DC I-V control system. Stimulation was conducted over five repeating cycles to demonstrate the behaviour of the resistance over time. Potentiation and depression were triggered by pulses of opposite polarity. The bias could potentially be altered to achieve a desired starting resistance. A total of five repeating cycles were conducted. Each experiment was conducted on a pristine device with 4V programming pulse width of 10ms and inter-pulse of 100ms. A total of 100 pulses were applied per direction. Each identical programming pulse was followed by a 0.1V non-invasive reading pulse for a fixed duration. Attached csv file include resistive values for three devices along with their corresponding pulse train and time.**实验方法** 本实验采用自主制备的铂/二氧化钛/金（Pt/TiO₂/Au）结构，各层厚度分别为15 nm、25 nm、20 nm。所制备的结构采用搭载于Cascade Microtech Summit 12000探针台的16×16探针卡进行表征，该探针台由ARC ONE直流电流-电压（DC I-V）控制系统操控。为表征电阻随时间的变化特性，实验开展了5次重复循环刺激。极性相反的电脉冲可触发电阻增强（potentiation）与电阻抑制（depression）过程。可通过调整偏置电压以获得目标起始电阻值。本次实验共计完成5次重复循环刺激。每项实验均采用全新未使用的器件，设置编程脉冲电压为4V、脉冲宽度10ms，脉冲间隔为100ms。每个极性方向均施加100个电脉冲。每一组相同的编程脉冲后，均施加一个电压为0.1V的固定时长非侵入式读取脉冲。附件中的逗号分隔值（Comma-Separated Values，CSV）文件包含3个器件的电阻值，以及与之对应的脉冲序列与时间数据。