Achieving Selectivity and Reduced Absorption for Low Loss Monolithic InAs QD based III-V Photonic Integration

This dataset includes photoluminescence (PL) spectra of InAs QD laser samples with different SiO₂ capping layer thicknesses, different rapid thermal annealing temperatures, and bombarded with different doses of protons. PL spectra of all the samples were obtained at room temperature using a 633 nm HeNe laser and NIR detection setup. Dataset aslo contains average power versus current (L–I) data for unimplanted and implanted laser devices measured under pulsed-bias operation (1 µs pulse width, 5 kHz), along with corresponding emission spectra (wavelength vs. optical power in arbitrary units). Peak power values used in the publication can be obtained by applying the provided duty cycle conversion and is descirbed in the provided READ-ME file. Additionally, wavelength-resolved absorption data from multi-segmented contact devices are included, derived from ASE spectra of independently pumped segments. All datasets are provided in organized Excel sheets with appropriate labeling.