Some Features of Resonant-Tunneling Diode Based on Nanowires

The features of the electrical characteristics of a resonant tunneling diode formed from planar indium antimonide nanowires are analyzed. It is shown that in such device, the interference of electron waves, in addition to resonant tunneling, can turn to fluctuations of electron concentration and electric charge. This phenomenon can be observed at room temperature, which makes it promising for use in quantum computing.